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| MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features * Collector -Emitter Sustaining Voltage - * High DC Current Gain - * * * * * VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com hFE = 85 (Min) @ IC = 0.8 Adc = 60 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc = 0.45 Vdc (Max) @ IC = 3.0 Adc SOT-223 Surface Mount Packaging Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V Pb-Free Package is Available POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.2 VOLTS C 2,4 4 C MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Base Current - Continuous Collector Current - Continuous - Peak Symbol VCEO VCB VEB IB IC PD Value 30 45 6.0 1.0 3.0 5.0 3.0 24 1.7 0.75 TJ, Tstg -55 to +150 C A Y W 9410 G Unit Vdc Vdc Vdc Adc Adc W mW/C W 1 B1 E3 Schematic B C E 123 Top View Pinout MARKING DIAGRAM Total Power Dissipation @ TC = 25C Derate above 25C Total PD @ TA = 25C mounted on 1" sq. (645 sq. mm) Collector pad on FR-4 bd material Total PD @ TA = 25C mounted on 0.012" sq. (7.6 sq. mm) Collector pad on FR-4 bd material Operating and Storage Junction Temperature Range SOT-223 (TO-261) CASE 318E STYLE 1 1 AYW 9410 G G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient on 1" sq. (645 sq. mm) Collector pad on FR-4 bd material Thermal Resistance, Junction-to-Ambient on 0.012" sq. (7.6 sq. mm) Collector pad on FR-4 bd material Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 5 seconds Symbol RqJC RqJA Max 42 75 Unit C/W C/W = Assembly Location = Year = Work Week = Device Code = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MMJT9410 MMJT9410G Package SOT-223 SOT-223 (Pb-Free) Shipping 1000 / Tape & Reel 1000 / Tape & Reel RqJA 165 C/W TL 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 1 October, 2006 - Rev. 6 Publication Order Number: MMJT9410/D II I I I III I I I II II IIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I II II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I II II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 2. fT = |hFE| * ftest DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 1) OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Current-Gain - Bandwidth Product (Note 2) (IC = 500 mA, VCE = 10 Vdc, Ftest = 1.0 MHz) Input Capacitance (VEB = 8.0 Vdc) Output Capacitance (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz) DC Current Gain (IC = 0.8 Adc, VCE = 1.0 Vdc) (IC = 1.2 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) Base-Emitter On Voltage (IC = 1.2 Adc, VCE = 4.0 Vdc) Base-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc) Collector-Emitter Saturation Voltage (IC = 0.8 Adc, IB = 20 mAdc) (IC = 1.2 Adc, IB = 20 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) Emitter Cutoff Current (VBE = 5.0 Vdc) Collector Cutoff Current (VCE = 25 Vdc, RBE = 200 W) (VCE = 25 Vdc, RBE = 200 W, TJ = 125C) Emitter-Base Voltage (IE = 50 mAdc, IC = 0 Adc) Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) 1.0 VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) 0.75 0.25 0.50 0 1.0 0.25 A 0.5 A Figure 1. Collector Saturation Region 0.8 A 1.2 A IB, BASE CURRENT (mA) 10 Characteristic IC = 3.0 A 100 http://onsemi.com MMJT9410 1000 2 0.10 0.15 0.20 0.05 0.25 0 1.0 VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) VEBO IEBO ICER Cob hFE Cib fT Figure 2. Collector Saturation Region IC = 0.25 A Min IB, BASE CURRENT (mA) 6.0 10 85 80 60 30 - - - - - - - - - - - 0.105 0.150 - Typ 200 200 - - 72 85 - - - - - - - 0.5 A 100 0.8 A 0.150 0.200 0.450 1.10 1.25 Max 135 20 200 1.2 A 10 - - - - - - - - mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc Vdc pF pF 1000 MMJT9410 1000 1000 HFE , DC CURRENT GAIN HFE , DC CURRENT GAIN 150C 25C 100 - 55C 150C 25C 100 - 55C VCE = 1.0 V 10 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 10 0.1 VCE = 4.0 V 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 3. DC Current Gain Figure 4. DC Current Gain 10 IC/IB = 10 1.0 VBE(sat) V, VOLTAGE (V) VBE(sat) V, VOLTAGE (V) 1.0 0.1 VCE(sat) 0.1 VCE(sat) 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 IC/IB = 50 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 5. "On" Voltages Figure 6. "On" Voltages 1.2 1000 V, VOLTAGE (V) 0.8 25C 150C 0.4 CAPACITANCE (pF) - 55C 100 Cob 10 VCE = 4.0 V 0 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 1.0 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) Figure 7. VBE(on) Voltage Figure 8. Capacitance http://onsemi.com 3 MMJT9410 f t , CURRENT-GAIN BANDWIDTH PRODUCT 100 IC , COLLECTOR CURRENT (AMPS) 10 0.5 ms 1.0 5.0 ms 100 ms 0.1 VCE = 10 V ftest = 1.0 MHz TA = 25C 10 0.1 1.0 IC, COLLECTOR CURRENT (AMP) 10 0.01 0.001 0.1 BONDING WIRE LIMIT THERMAL LIMIT (Single Pulse) SECONDARY BREAKDOWN LIMIT 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. Current-Gain Bandwidth Product Figure 10. Active Region Safe Operating Area 4.0 PD , POWER DISSIPATION (WATTS) 3.0 TC 2.0 1.0 TA 0 25 50 75 100 125 150 T, TEMPERATURE (C) There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on T J(pk) = 150C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150C. T J(pk) may be calculated from the data in Figure 12. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. Figure 11. Power Derating 1.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.001 RqJA(t) = r(t) qJA qJA = 165C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) qJA(t) 0.01 0.1 t, TIME (seconds) 1.0 10 P(pk) 0.01 t1 t2 DUTY CYCLE, D = t1/t2 100 1000 0.0001 0.0001 0.001 Figure 12. Thermal Response http://onsemi.com 4 MMJT9410 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE L D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - 4 HE 1 2 3 E b e1 e q C DIM A A1 b b1 c D E e e1 L1 HE q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 A 0.08 (0003) A1 L1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 MMJT9410/D |
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